An Experimental Investigation of Sol-Gel Derived Undoped and Rare-Earth Yttrium Doped ZnO Thin Films Along with Their Transistors

Authors

  • Bhawna Department of Physics, School of Physical Sciences, Starex University, Gurugram, India. Author
  • Anuj Kumar Department of Physics, J. C. Bose University of Science & Technology, YMCA, Faridabad, India. Author
  • Rashmi Singh Department of Physics, School of Physical Sciences, Starex University, Gurugram, India. Author
  • Karan Upadhaya Department of Physics, Harcourt Butler Technical University (HBTU), Kanpur, India. Author
  • Dongjin Lee Department of Mechanical Engineering, Konkuk University, Gwangjin, Seoul, South Korea. Author
  • Manoj Kumar Department of Physics, Harcourt Butler Technical University (HBTU), Kanpur, India. Author

DOI:

https://doi.org/10.66566/ijmir/2026.v6n2.11

Keywords:

ZnO Thin Films, Sol-Gel Method, Yttrium Doping, Thin Film Transistor (TFT), X-ray Diffraction (XRD), Electron Mobility, Rare-Earth Doping.

Abstract

In this report, the development of solution-processed sol-gel derived un-doped and rare-earth yttrium (Y) doped ZnO (Y-ZnO) thin films is presented. Both undoped and Y-ZnO thin films exhibited a highly preferred (002) c-axis orientation peak. The Y-ZnO thin film crystallinity was considerably improved with an increase of (002) peak intensity and grain size. O1s spectra of X-ray photoelectron spectroscopy (XPS) showed less number of oxygen vacancy-related defects present in the Y-ZnO as compared to undoped ZnO. The fabricated thin film transistor (TFT) based on un-doped ZnO exhibited an on/off current ratio of 102 and field effect mobility of 0.0052 cm2 V-1 s-1 and large threshold voltage respectively. However, Y-ZnO-based TFT showed an on/off current ratio exceeding 102, and electron mobility was achieved at 0.011 cm2 V-1 s-1.

 

References

[1] S. J. Kim, A. R. Song, S. S. Lee, S. Nahm, Y. Choi, K. B. Chung, and S. Jeong, J. Mat. Chem. C, vol. 3, pp. 1457, 2015.

[2] M. Esro, G. Vourlias, C. Somerton, W. I. Milne, and G. Adamopoulos, Adv. Funct. Mater., vol. 25, pp. 134, 2015.

[3] H. W. Lee, M. Kim, J. H. Jun, U. Choi, and B. H. Lee, “Improving the performance of ultrathin ZnO TFTs using high pressure hydrogen annealing,” Nanomaterials, vol. 15, no. 9, pp. 1484, 2025.

[4] J. Chang, Z. Lin, M. Lin, C. Zhu, J. Zhang, and J. Wu, J. Mater. Chem. C, vol. 3, pp. 1787, 2015.

[5] H. C. Liu, Y. C. Lai, C. C. Lai, B. S. Wu, H. W. Zan, P. Yu, Y. L. Chueh, and C. C. Tsai, ACS Appl. Mater. Interfaces, vol. 7, pp. 232, 2015.

Cover Page

Downloads

Published

01-04-2026

Issue

Vol. 6 No. 2 (2026)

Section

Articles

License

Copyright (c) 2026 Council of Industrial Innovation and Research (CIIR), Noida, India.

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.

How to Cite

[1]
Bhawna, A. Kumar, R. Singh, K. Upadhaya, D. Lee, and M. Kumar, “An Experimental Investigation of Sol-Gel Derived Undoped and Rare-Earth Yttrium Doped ZnO Thin Films Along with Their Transistors”, Int. J. Multidiscip. Innovat. Res., vol. 6, no. 2, pp. 98–105, Apr. 2026, doi: 10.66566/ijmir/2026.v6n2.11.